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Mitsubishi
GaAs High Frequency Devices
Low Noise GaAs Discrete Transistors
High Power GaAs Discrete Transistors
C Band Internally Matched Power GaAs FETs
L/S Band Internally Matched Power GaAs FETs
X/Ku Band Internally Matched Power GaAs FETs
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Product Details
MGFS38E2527
S Parameter
fL(MHz)
Po(dBm)
fH(MHz)
-
2500
28.5
2700
VD(V)
Eff(%)
VG(V)
Pin(dBm)
5
15
2.85
-7.5
Datasheet
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MGFS38E2527
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