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Mitsubishi
GaAs High Frequency Devices
Low Noise GaAs Discrete Transistors
High Power GaAs Discrete Transistors
C Band Internally Matched Power GaAs FETs
L/S Band Internally Matched Power GaAs FETs
X/Ku Band Internally Matched Power GaAs FETs
GaAs Power Amplifier for Mobile Phone
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Product Details
MGFC39V3436
S Parameter
Drain-Source Voltage(V)
Frequency (GHz)
Output Power at 1dB Gain Compression(dBm)
mgfc39v3436.s2p
10
3.4~3.6
38.0(min) 39.5(typ)
Linear Power Gain(dB)
3rd Order IM Distortion(dBc)
Power Added Efficiency(%)
Drain Current(A)
10.0(min)
-42.0(min) -45.0(typ)
32.0
2.4
Inverter cir thermal resistance(Cel/W)
Datasheet
3.0(typ) 3.5(max)
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Pricing Tiers
Qty
Price
1
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MGFC39V3436
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