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Mitsubishi
GaAs High Frequency Devices
Low Noise GaAs Discrete Transistors
High Power GaAs Discrete Transistors
C Band Internally Matched Power GaAs FETs
L/S Band Internally Matched Power GaAs FETs
X/Ku Band Internally Matched Power GaAs FETs
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Product Details
MGF0911A
S Parameter
Drain-Source Voltage(V)
Frequency (GHz)
Po(dBm)
mgf0911a.s2p
10
2.3
40.0(min)
Output Power at 1dB Gain Compression(dBm)
Linear Power Gain(dB)
Power Added Efficiency(%)
Drain Current(A)
40.0(min) 41.0(typ)
10
40
2.6
Inverter cir thermal resistance(Cel/W)
Datasheet
4.5(max)
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MGF0911A
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