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Mitsubishi
GaAs High Frequency Devices
Low Noise GaAs Discrete Transistors
High Power GaAs Discrete Transistors
C Band Internally Matched Power GaAs FETs
L/S Band Internally Matched Power GaAs FETs
X/Ku Band Internally Matched Power GaAs FETs
GaAs Power Amplifier for Mobile Phone
GaAs Amplifier for WiMax/Wi-Fi
Silicon RF Devices
Optical Devices
TFTs
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Diamond Components
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Product Details
MGF0907B
S Parameter
Drain-Source Voltage(V)
Frequency (GHz)
Output Power at 1dB Gain Compression(dBm)
mgf0907b.s2p
10
2.3
38.5(min) 40.0(typ)
Linear Power Gain(dB)
Power Added Efficiency(%)
Drain Current(A)
Inverter cir thermal resistance(Cel/W)
8
37
2.4
4.0(max)
Datasheet
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MGF0907B
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