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Mitsubishi
GaAs High Frequency Devices
Low Noise GaAs Discrete Transistors
High Power GaAs Discrete Transistors
C Band Internally Matched Power GaAs FETs
L/S Band Internally Matched Power GaAs FETs
X/Ku Band Internally Matched Power GaAs FETs
GaAs Power Amplifier for Mobile Phone
GaAs Amplifier for WiMax/Wi-Fi
Silicon RF Devices
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Product Details
MGF0906B
S Parameter
Drain-Source Voltage(V)
Frequency (GHz)
Output Power at 1dB Gain Compression(dBm)
mgf0906b.s2p
10
2.3
35.5(min) 37.0(typ)
Linear Power Gain(dB)
Power Added Efficiency(%)
Drain Current(A)
Inverter cir thermal resistance(Cel/W)
11
40
1.2
6.5(max)
Datasheet
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MGF0906B
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